Chemical and Biomolecular Engineering Research and Publications
Date of this Version
April 2003
Abstract
A memory device including at least one pair of spaced apart conductors and a ferroelectric material between the pair of conductors. The pair of conductors is spaced apart a distance sufficient to permit a tunneling current there between.
Comments
The Inventors of this patent are Hemantha K. Wickramasinghe, Chappaqua, NY (US); Ravi F. Saraf, Briar Cliff Manor, NY (US) The relevant information about this patent can be obtained from the website. United States Patent No.6,548,843 B2