Authors
V. Darakchieva, Instituto Tecnológico e Nuclear, 2686-953 Sacavém, Portugal
K. Lorenz, Instituto Tecnológico e Nuclear, 2686-953 Sacavém, Portugal
N. P. Barradas, Instituto Tecnológico e Nuclear, 2686-953 Sacavém, Portugal
E. Alves, Instituto Tecnológico e Nuclear, 2686-953 Sacavém, Portugal
B. Monemar, Department of Physics, Chemistry and Biology, Linköping University, SE-581 83 Linköping, Sweden
Mathias Schubert, University of Nebraska - LincolnFollow
N. Franco, Instituto Tecnológico e Nuclear, 2686-953 Sacavém, Portugal
C. L. Hsiao, Center for Condensed Matter Sciences, National Taiwan University, Taipei 106, Taiwan
L. C. Chen, Center for Condensed Matter Sciences, National Taiwan University, Taipei 106, Taiwan
W. J. Schaff, Cornell University, Ithaca, New York
L. W. Tu, Department of Physics and Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan
T. Yamaguchi, Department of Photonics, Ritsumeikan University, Shiga 525-8577, Japan
Y. Nanishi, Department of Photonics, Ritsumeikan University, Shiga 525-8577, Japan
Date of this Version
2010
Abstract
We study the unintentional H impurities in relation to the free electron properties of state-of-the-art InN films grown by molecular beam epitaxy (MBE). Enhanced concentrations of H are revealed in the near surface regions of the films, indicating postgrowth surface contamination by H. The near surface hydrogen could not be removed upon thermal annealing and may have significant implications for the surface and bulk free electron properties of InN. The bulk free electron concentrations were found to scale with the bulk H concentrations while no distinct correlation with dislocation density could be inferred, indicating a major role of hydrogen for the unintentional conductivity in MBE InN.
Comments
Published in Appl. Phys. Lett. 96, 081907 (2010). Copyright © 2010 American Institute of Physics. Used by permission.