Research Papers in Physics and Astronomy

 

Date of this Version

6-2010

Citation

Published in Journal of Physics D: Applied Physics 43:27 (2010), 11 pp. doi:10.1088/0022-3727/43/27/275101

Comments

Copyright © 2010 IOP Publishing Ltd. Used by permission.

Abstract

Neutron detection in thick boron carbide(BC)/n-type Si heterojunction diodes shows a threefold increase in efficiency with applied bias and longer time constants. The improved efficiencies resulting from long time constants have been conclusively linked to the much longer charge collection times in the BC layer. Neutron detection signals from both the p-type BC layer and the n-type Si side of the heterojunction diode are observed, with comparable efficiencies. Collectively, these provide strong evidence that the semiconducting BC layer plays an active role in neutron detection, both in neutron capture and in charge generation and collection.