Research Papers in Physics and Astronomy

 

Date of this Version

6-2017

Citation

Physical Review Letters 118: 236801 (2017).

doi: 10.1103/PhysRevLett.118.236801

Comments

Copyright © 2017 American Physical Society. Used by permission.

Abstract

We exploit scanning-probe-controlled domain patterning in a ferroelectric top layer to induce nonvolatile modulation of the conduction characteristic of monolayer MoS2 between a transistor and a junction state. In the presence of a domain wall, MoS2 exhibits rectified I-V characteristics that are well described by the thermionic emission model. The induced Schottky barrier height ΦeffB varies from 0.38 to 0.57 eV and is tunable by a SiO2 global back gate, while the tuning range of ΦeffB depends sensitively on the conduction-band-tail trapping states. Our work points to a new route to achieving programmable functionalities in van der Waals materials and sheds light on the critical performance limiting factors in these hybrid systems.

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