Research Papers in Physics and Astronomy

 

Date of this Version

12-2-2003

Comments

United States Patent. Patent No.: US 6,657,888 B1.

Abstract

Disclosed are two terminal bistable memory cells having least two high-spin polarization magnetic material junctions which are separated from one another by electron trap site defect containing insulator. The two terminal bistable memory cells demonstrate stable, low current readable, hysteretic resistance states which are set by the flow of a relatively high, (eg. a milliamp or less), plus or minus polarity D.C. current therethrough, which resistance is monitored by lower magnitude A.C. or D.C. current flow therethrough. Preferred cells have at least one Cr02/Cr203/ CrO2 sequence but typically have multiple Cr02/Cr203/ CrO2 sequences in series.

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