Study on Case Temperature Distribution for Condition Monitoring of Multidie IGBT Modules

Authors

Bo Tian, University of Nebraska-LincolnFollow
Ze Wang, University of Nebraska-Lincoln
Wei Qiao, University of Nebraska–LincolnFollow

Date of this Version

2014

Citation

Applied Power Electronics Conference and Exposition (APEC), 2014 Twenty-Ninth Annual IEEE

Comments

©2014 IEEE

Abstract

The parasitic and proximity effects in multidie insulated-gate bipolar transistor (IGBT) modules lead to nonuniform distributions of junction temperature (T_J) and case temperature (T_C) among different dies. This feature can be used to monitor the operating and health condition of multidie IGBT modules. This paper reports a comprehensive study on the distribution of T_C and its influence on T_J estimation using a thermal network model for a multidie IGBT module before and after aging. Specifically, experimental studies using accelerated aging tests are conducted for a 9-die IGBT module. Results demonstrate that the T_C at the position close to the package side and terminal lead should be used to estimate T_J for condition monitoring of the multidie IGBT module. Moreover, the variation of T_C and nonuniformity of the T_C distribution can be used as indicators for health condition monitoring of the multidie IGBT module.