Chemical and Biomolecular Engineering, Department of
Department of Chemical and Biomolecular Engineering: Patents
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Ferroelectric Storage Read-Write Memory
Date of this Version
4-15-2003
Abstract
A memory device including at least one pair of spaced apart conductors and a ferroelectric material between the pair of conductors. The pair of conductors is spaced apart a distance sufficient to permit a tunneling current there between.
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Comments
Inventors: Hemantha K. Wickramasinghe, Chappaqua, NY (US); Ravi F. Saraf, Briar Cliff Manor, NY (US)