Tris(dialkylamino)aluminums: Syntheses, characterization, volatility comparison, and atomic layer deposition of alumina thin films

Authors

Casey R. Wade, University of Nebraska - Lincoln
Carter Silvernail, University of Nebraska - Lincoln
Chiranjib Banerjee, University of Nebraska - Lincoln
Axel Soulet, American Air Liquide, 5230 S. East Ave., Countryside IL
James McAndrew, American Air Liquide, 5230 S. East Ave., Countryside IL
John A. Belot Jr., University of Nebraska - LincolnFollow

Date of this Version

December 2007

Comments

Published in Materials Letters 61:29 (December 2007), pp. 5079-5082. Copyright © 2007 Elsevier B.V. Used by permission. http://www.sciencedirect.com/science/journal/0167577X

Abstract

The syntheses and characterization of both tris(diethylamino)aluminum and tris(diisopropylamino)aluminum are presented in this letter. Characterization includes vapor pressure measurements and comparison of the two non-pyrophoric precursors showing them to be viable alternatives to trimethylaluminum. Ultimately, tris(diisopropyl)aluminum was successful in the atomic layer deposition of alumina thin films.