Long-Term Degradation Mechanisms in Application-Implemented Radical Thin Films

Authors

Ewa Malgorzata Nowik-Boltyk, University of Tübingen
Tobias Junghoefer, University of Tübingen
Mathias Glaser, University of Tübingen
Erika Giangrisostomi, Institute Methods and Instrumentation for Synchrotron Radiation Research
Ruslan Ovsyannikov, Institute Methods and Instrumentation for Synchrotron Radiation Research
Shuyang Zhang, University of Nebraska-Lincoln
Chan Shu, University of Nebraska-Lincoln
Andrzej Rajca, University of Nebraska - LincolnFollow
Arrigo Calzolari, CNR-NANO Istituto Nanoscienze
M. Benedetta Casu, University of Tübingen

Date of this Version

6-15-2023

Citation

ACS Appl. Mater. Interfaces 2023, 15, 30935−30943. https://doi.org/10.1021/acsami.3c02057

Comments

Used by permission.

Abstract

Blatter radical derivatives are very attractive due to their potential applications, ranging from batteries to quantum technologies. In this work, we focus on the latest insights regarding the fundamental mechanisms of radical thin film (long-term) degradation, by comparing two Blatter radical derivatives. We find that the interaction with different contaminants (such as atomic H, Ar, N, and O and molecular H₂, N₂, O₂, H₂O, and NH₂) affects the chemical and magnetic properties of the thin films upon air exposure. Also, the radical-specific site, where the contaminant interaction takes place, plays a role. Atomic H and NH₂ are detrimental to the magnetic properties of Blatter radicals, while the presence of molecular water influences more specifically the magnetic properties of the diradical thin films, and it is believed to be the major cause of the shorter diradical thin film lifetime in air.