Resonant tunneling in magnetoresistive Ni/NiO/Co nanowire junctions

Authors

Andrei Sokolov, University of Nebraska-LincolnFollow
Ildar F. Sabiryanov, University of Nebraska - LincolnFollow
Evgeny Y. Tsymbal, University of Nebraska-LincolnFollow
Bernard Doudin, University of Nebraska-LincolnFollow
Xingzhong Li, University of Nebraska-LincolnFollow
Jody G. Redepenning, University of Nebraska-LincolnFollow

Document Type

Article

Date of this Version

5-15-2003

Comments

Published in Journal of Applied Physics, Vol. 93, No. 10, pp. 7029–7031, 15 May 2003. ©2003 American Institute of Physics. Used by permission.
doi:10.1063/1.1558657 http://jap.aip.org/jap/top.jsp

Abstract

Magnetotransport studies performed on electrodeposited Ni/NiO/Co nanojunctions show a broad distribution of magnetoresistance values spanning from +40% to –25%, with an average of about 2%, corresponding to observations on large-area junctions. The dispersion in the results can be understood in terms of tunneling via localized states in the barrier. Calculations based on Landauer–Büttiker theory explain this behavior in terms of disorder-driven statistical variations in magnetoresistance with a finite probability of the inversion of tunnel magnetoresistance sign due to resonant tunneling.