"Anisotropic strain and phonon deformation potentials in GaN" by V. Darakchieva, T. Paskova et al.

Materials and Nanoscience, Nebraska Center for (NCMN)

 

Document Type

Article

Date of this Version

May 2007

Comments

Published in PHYSICAL REVIEW B 75, 195217 2007. ©2007 The American Physical Society. Used by permission.

Abstract

We report optical phonon frequency studies in anisotropically strained c-plane- and a-plane-oriented GaN films by generalized infrared spectroscopic ellipsometry and Raman scattering spectroscopy. The anisotropic strain in the films is obtained from high-resolution x-ray diffraction measurements. Experimental evidence for splitting of the GaN E1(TO), E1(LO), and E2 phonons under anisotropic strain in the basal plane is presented, and their phonon deformation potentials cE1(TO) , cE1(LO) , and cE2 are determined. A distinct correlation between anisotropic strain and the A1(TO) and E1(LO) frequencies of a-plane GaN films reveals theaA1TO, bA1TO, aE1LO, andbE1LO phonon deformation potentials. The aA1TO and bA1TOaA1TO and aE1LO phonon deformation potentials agree well with recently reported theoretical estimations [J.-M. Wagner and F. Bechstedt, Phys. Rev. B 66, 115202 (2002)], while bA1TO and bE1LO are found to be significantly larger than the theoretical values. A discussion of the observed differences is presented.

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