Graduate Studies, UNL

 

Dissertations and Doctoral Documents, University of Nebraska-Lincoln, 2023–

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First Advisor

Jerry Hudgins

Degree Name

Doctor of Philosophy (Ph.D.)

Committee Members

Jeffrey Shield, Jun Wang, Natale Ianno

Department

Electrical Engineering

Date of this Version

5-5-2026

Document Type

Dissertation

Citation

A dissertation presented to the faculty of the Graduate College at the University of Nebraska in partial fulfillment of requirements for the degree Doctor of Philosophy

Major: Electrical Engineering

Under the supervision of Professor Jerry Hudgins

Lincoln, Nebraska, May 2026

Comments

Copyright 2026, Kate L. Smith. Used by permission

Abstract

Ramp to breakdown (RTBD), constant voltage time dependent dielectric breakdown (CVS-TDDB), and low-field long term (LFLT) tests were performed on commercially available silicon carbide MOSFETs from four manufacturers in discrete, TO-247 packaging (A, B, C, and D). Voltage and temperature stress factors are examined for their impact on oxide breakdown. “High temperature gate bias stress test of silicon carbide MOSFETs from multiple manufacturers were performed. It was found that some extrinsic oxide failures are an ongoing problem. The results of the tests and lifetime analysis are presented” (Oxide Failures in SiC Power MOSFETs).

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