EFFECT OF LASER-ASSISTED RESONANT EXCITATION ON THE GROWTH OF GaN FILMS

Authors

H. Rabiee Golgir, University of Nebraska-LincolnFollow
Y. Gao, University of Nebraska-Lincoln
Y. S. Zhou, University of Nebraska-LincolnFollow
L. S. Fan, University of Nebraska-LincolnFollow
Kamran Keramatnejad, University of Nebraska-LincolnFollow
Yongfeng Lu, University of Nebraska - LincolnFollow

Date of this Version

2014

Citation

Golgir, H. R.; Gao, Y.; Zhou, Y.; Fan, L.; Keramatnejad, K.; Lu, Y. In Effect of laser-assisted resonant excitation on the growth of GaN films, Proceedings of the 33nd International Congress on Applications of Lasers and Electro-Optics (ICALEO), 2014.

Abstract

Gallium nitride (GaN) films were grown using laser-assisted metal organic chemical vapor deposition (LMOCVD). The vibrational mode (1084.63 cm^-1) of ammonia (NH₃) molecules was resonantly excited using a wavelength-tunable CO₂ laser at a laser wavelength of 9.219 μm due to its high absorption cross-section. Through wavelength-matched resonant excitation of the NH3 molecules, highly c-axis oriented GaN films were successfully deposited on sapphire (α-Al₂O₃) substrates at low temperatures (250 to 600^oC). The strong (0001) GaN peak in Xray diffraction spectra confirmed the good crystalline quality of GaN films. Additionally, the resonant vibrational excitation of NH₃ in LMOCVD promoted the GaN growth rate considerably compared to that synthesized by MOCVD without resonant vibrational excitation of NH₃ molecules.