A non-vacuum process for preparing nanocrystalline CuIn_1−xGa_xSe₂ materials involving an open-air solvothermal reaction

Authors

J. Olejníček, University of Nebraska at Kearney,
Chad A. Kamler, University of Nebraska-Lincoln
A. Mirasano, University of Nebraska at Kearney,
A. L. Martinez-Skinner, University of Nebraska at Kearney,
M. A. Ingersoll, University of Nebraska at Kearney,
C. L. Exstrom, University of Nebraska at Kearney,Follow
S. A. Darveau, University of Nebraska at Kearney,
J. L. Huguenin-Love
M. Diaz, University of Nebraska-Lincoln
Natale J. Ianno, University of Nebraska-LincolnFollow
Rodney J. Soukup, University of Nebraska-LincolnFollow

Document Type

Article

Date of this Version

1-2010

Comments

Published in Solar Energy Materials and Solar Cells 94:1 (January 2010), pp. 8–11; doi: 10.1016/j.solmat.2009.03.024 Copyright © 2009 Elsevier B.V. Used by permission. http://www.elsevier.com/locate/solmat

Abstract

A non-vacuum, two-step process has been used to prepare a series of nanocrystalline CuIn_1−xGa_xSe₂ (x = 0, 0.25, 0.5, 0.75, 1) materials. An open-air solvothermal preparation in triethylenetetramine solvent was followed by annealing at 500 °C in a nitrogen atmosphere for 20 min. All materials have mixed clustered plate, spherical particle, and nanorod morphologies with the smallest particle diameters ranging between 20 and 40 nm. Raman spectroscopy and X-ray diffraction (XRD) confirm that indium/gallium ratio control is possible over a wide range. The solvothermal reaction step yields a mixture of chalcopyrite and Cu_2−xSe. This is converted to pure chalcopyrite product by annealing at 500 °C.