Infrared response of multiple-component free-carrier plasma in heavily doped p-type GaAs

Authors

S. Zangooie, University of Nebraska-Lincoln
Mathias Schubert, University of Nebraska-LincolnFollow
Daniel W. Thompson, University of Nebraska-LincolnFollow
John A. Woollam, University of Nebraska-LincolnFollow

Date of this Version

2-12-2001

Comments

Published in APPLIED PHYSICS LETTERS, VOLUME 78, NUMBER 7, 12 FEBRUARY 2001. © 2001 American Institute of Physics. Used by permission.

Abstract

Spectroscopic ellipsometry is used to measure the dielectric function of heavily doped p-type GaAs for wave numbers from 100 to 2000 cm^-1. Due to partial filling of the heavy- and light-hole valence bands, heavy holes as well as light holes form a multiple-component plasma coupled with longitudinal optical phonons. Line-shape analysis of the infrared response allows differentiating between light- and heavy-hole contributions to the carrier plasma, and the results observed suggest nonparabolicity effects of the heavy- and light-hole valence bands in GaAs.