Date of this Version
Applied Power Electronics Conference and Exposition (APEC), 2014 Twenty-Ninth Annual IEEE
The parasitic and proximity effects in multidie insulated-gate bipolar transistor (IGBT) modules lead to nonuniform distributions of junction temperature (TJ) and case temperature (TC) among different dies. This feature can be used to monitor the operating and health condition of multidie IGBT modules. This paper reports a comprehensive study on the distribution of TC and its influence on TJ estimation using a thermal network model for a multidie IGBT module before and after aging. Specifically, experimental studies using accelerated aging tests are conducted for a 9-die IGBT module. Results demonstrate that the TC at the position close to the package side and terminal lead should be used to estimate TJ for condition monitoring of the multidie IGBT module. Moreover, the variation of TC and nonuniformity of the TC distribution can be used as indicators for health condition monitoring of the multidie IGBT module.