Infrared ellipsometry on hexagonal and cubic boron nitride thin films

Authors

E. Franke, Institute of Surface Modification, D-04303 Leipzig, GermanyFollow
H. Neumann, Institute of Surface Modification, Leipzig, Germany
Mathias Schubert, University of Nebraska-LincolnFollow
T. E. Tiwald, University of Nebraska-Lincoln
John A. Woollam, University of Nebraska-LincolnFollow
J. Hahn, Institute of Physics, Technical University Chemnitz-Zwickau, D-09107 Chemnitz, Germany

Date of this Version

3-31-1997

Comments

Published in Appl. Phys. Lett. 70 (13), 31 March 1997. © 1997 American Institute of Physics. Used by permission.

Abstract

Infrared spectroscopic ellipsometry (IRSE) over the wavelength range from 700 to 3000 cm^-1 has been used to study and distinguish the microstructure of polycrystalline hexagonal and cubic boron nitride thin films deposited by magnetron sputtering onto (100) silicon. The IRSE data are sensitive to the thin-film layer structure, phase composition, and average grain c-axes orientations of the hexagonal phase. We determine the amount of cubic material in high cubic boron nitride content thin films from the infrared optical dielectric function using an effective medium approach.