Dose dependence of radiation damage in nano-structured amorphous SiOC/crystalline Fe composite

Authors

Qing Su, University of Nebraska-LincolnFollow
Lloyd Price, Texas A&M University
Lin Shao, Texas A&M UniversityFollow
Michael Nastasi, University of Nebraska-LincolnFollow

Document Type

Article

Date of this Version

2016

Citation

Mater. Res. Lett., 2016 Vol. 4, No. 1, 48–54; doi: 10.1080/21663831.2015.1103796

Comments

This is an Open Access article distributed under the terms of the Creative Commons Attribution License

Abstract

Through examination of radiation tolerance properties of amorphous silicon oxycarbide (SiOC) and crystalline Fe composite to averaged damage levels, from approximately 8 to 30 displacements per atom (dpa), we demonstrated that the Fe/SiOC interface and the Fe/amorphous Fe_xSi_yO_z interface act as efficient defect sinks and promote the recombination of vacancies and interstitials. For thick Fe/SiOC multilayers, a clear Fe/SiOC interface remained and no irradiation-induced mixing was observed even after 32 dpa. For thin Fe/SiOC multilayers, an amorphous Fe_xSi_yO_z intermixed layer was observed to form at 8 dpa, but no further layer growth was observed for higher dpa levels.