Alloy states in dilute GaAs_1-xN_x alloys (x<1%)

Authors

X. D. Luo, Chinese Academy of Sciences
Jinsong Huang, University of Nebraska-LincolnFollow
Z. Y. Xu, Chinese Academy of Sciences
C. L. Yang, Hong Kong University of Science and Technology
J. Liu, Hong Kong University of Science and Technology
W. K. Ge, Hong Kong University of Science and Technology
Y. Zhang, National Renewable Energy Laboratory
A. Mascarenhas, National Renewable Energy Laboratory
H. P. Xin, University of California at San Diego
C. W. Tu, University of California at San Diego

Date of this Version

2003

Citation

Applied Physics Letters, Volume 82, Number 11 17 March 2003

Comments

© 2003 American Institute of Physics

Abstract

A set of GaAs_1-xN_x samples with small nitrogen composition (x<1%) were investigated by continuous-wave photoluminescence (PL), pulse-wave excitation PL, and time-resolved PL. In the PL spectra, an extra transition located at the higher-energy side of the commonly reported N-related emissions was observed. By measuring the PL dependence on temperature and excitation power, the PL peak was identified as a transition of alloy band edge-related recombination in GaAsN. The PL dynamics further confirms its intrinsic nature as being associated with the band edge rather than N-related bound states.