Alloy states in dilute GaAs_1-xN_x alloys (x<1%)

Authors

• X. D. Luo, Chinese Academy of Sciences
• Jinsong Huang, University of Nebraska-LincolnFollow
• Z. Y. Xu, Chinese Academy of Sciences
• C. L. Yang, Hong Kong University of Science and Technology
• J. Liu, Hong Kong University of Science and Technology
• W. K. Ge, Hong Kong University of Science and Technology
• Y. Zhang, National Renewable Energy Laboratory
• A. Mascarenhas, National Renewable Energy Laboratory
• H. P. Xin, University of California at San Diego
• C. W. Tu, University of California at San Diego

Document Type

Article

Date of this Version

2003

Citation

Applied Physics Letters, Volume 82, Number 11 17 March 2003

Comments

© 2003 American Institute of Physics

Abstract

A set of GaAs_1-xN_x samples with small nitrogen composition (x<1%) were investigated by continuous-wave photoluminescence (PL), pulse-wave excitation PL, and time-resolved PL. In the PL spectra, an extra transition located at the higher-energy side of the commonly reported N-related emissions was observed. By measuring the PL dependence on temperature and excitation power, the PL peak was identified as a transition of alloy band edge-related recombination in GaAsN. The PL dynamics further confirms its intrinsic nature as being associated with the band edge rather than N-related bound states.