Electronic structure of ErAs(100)

Authors

Takashi Komesu, University of Nebraska-LincolnFollow
Hae-Kyung Jeong, University of Nebraska-LincolnFollow
Jaewu Choi, University of Nebraska-LincolnFollow
C.N. Borca, University of Nebraska-Lincoln
Peter A. Dowben, University of Nebraska-LincolnFollow
A.G. Petukhov, South Dakota School of Mines and Technology
B.D. Schultz, University of Minnesota-Minneapolis, Minnesota
C.J. Palmstrom, University of Minnesota-Minneapolis, Minnesota

Date of this Version

1-14-2003

Comments

Physical Review B 67 (2003) art. no. 035104. Published by American Physical Society. Copyright 2003. Used by permission. http://prb.aps.org/

Abstract

The experimental band structure of the rare-earth pnictide erbium arsenide (ErAs), grown epitaxially on GaAs(100), has been mapped out using photoelectron spectroscopy and inverse photoemission spectroscopy. The electronic structure is dominated by bulk bands qualitatively consistent with the calculated band structure. A number of additional nondispersing 4 f multiplet levels can be identified in the valence-band structure as well as at least one surface resonance band. From symmetry selection rules, photoemission provides strong evidence that the Δ₅ (or e) symmetry bands are a consequence of hybridization between Er and As, while the Δ ₁ (or a₁) symmetry bands have possible contributions from nonbonding or antibonding states from Er (and/or As).