Research Papers in Physics and Astronomy

 

Date of this Version

6-1-2007

Comments

Published in Applied Physics A 89 (2007), pp. 489–492. Copyright © 2007 Springer-Verlag. Used by permission.

Abstract

Gd-doped HfO2 films were deposited on p-type silicon substrates in a reducing atmosphere. Photoemission measurements indicate the n-type character of Gd-doped HfO2 due to overcompensation with oxygen vacancies. The Gd 4 f photoexcitation peak at 5.5 eV below the valence band maximum is identified using both resonant photoemission and first-principles calculations of the f hole. The rectifying (diode- like) properties of Gd-doped HfO2 to silicon heterojunctions are demonstrated.

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