The n-type Gd-doped HfO₂ to silicon heterojunction diode

Authors

• Ihor Ketsman, University of Nebraska-LincolnFollow
• Yaroslav B. Losovyj, University of Nebraska-LincolnFollow
• Andrei Sokolov, University of Nebraska-LincolnFollow
• J. Tang, University of New Orleans
• Z. Wang, University of New Orleans, New Orleans, Louisiana
• Kirill D. Belashchenko, University of Nebraska-LincolnFollow
• Peter A. Dowben, University of Nebraska-LincolnFollow

Document Type

Article

Date of this Version

6-1-2007

Comments

Published in Applied Physics A 89 (2007), pp. 489–492. Copyright © 2007 Springer-Verlag. Used by permission.

Abstract

Gd-doped HfO₂ films were deposited on p-type silicon substrates in a reducing atmosphere. Photoemission measurements indicate the n-type character of Gd-doped HfO₂ due to overcompensation with oxygen vacancies. The Gd 4 f photoexcitation peak at 5.5 eV below the valence band maximum is identified using both resonant photoemission and first-principles calculations of the f hole. The rectifying (diode- like) properties of Gd-doped HfO₂ to silicon heterojunctions are demonstrated.