Evidence for Multiple Polytypes of Semiconducting Boron Carbide (C₂B₁₀) from Electronic Structure

Authors

• Petru Lunca-Popa, University of Nebraska-Lincoln
• Jennifer I. Brand, University of Nebraska-LincolnFollow
• Snjezana Balaz, University of Nebraska-LincolnFollow
• Luis G. Rosa, University of Nebraska-LincolnFollow
• Neil M. Boag, University of Nebraska-LincolnFollow
• Mengjun Bai, University of Nebraska-LincolnFollow
• Brian W. Robertson, University of Nebraska-LincolnFollow
• Peter A. Dowben, University of Nebraska-LincolnFollow

Document Type

Article

Date of this Version

4-21-2005

Comments

Published in Journal of Physics D: Applied Physics 38 (2005): 1,248-1,252. Copyright 2005, Institute of Physics Publishing. doi:10.1088/0022-3727/38/8/023 Used by permission.

Abstract

Boron carbides fabricated via plasma enhanced chemical vapor deposition from different isomeric source compounds with the same C₂B₁₀H₁₂ closo-icosa- hedral structure result in materials with very different direct (optical) band gaps. This provides compelling evidence for the existence of multiple polytypes of C₂B₁₀ boron carbide and is consistent with electron diffraction results.