3d transition metal doping of semiconducting boron carbides

Authors

Peter A. Dowben, University of Nebraska-LincolnFollow
Orhan Kizilkaya, Louisiana State University at Baton RougeFollow
Jing Liu, University of Nebraska-Lincoln
B. Montag, University of Nebraska-Lincoln
K. Nelson, University of Nebraska-Lincoln
Ildar F. Sabiryanov, University of Nebraska-LincolnFollow
Jennifer I. Brand, University of Nebraska-LincolnFollow

Date of this Version

1-15-2009

Comments

Published in Materials Letters 63:1 (January 15, 2009), pp. 72-74; doi: 10.1016/j.matlet.2008.09.004 Copyright © 2008 Elsevier B.V. Used by permission. http://www.elsevier.com/locate/matlet

Abstract

The introduction metallocenes, in particular ferrocene (Fe(η⁵-C₅H₅)₂), cobaltocene (Co(η⁵-C₅H₅)₂), and nickelocene (Ni(η⁵-C₅H₅)₂), together with the carborane source molecule closo-1,2-dicarbadodecaborane, during plasma enhanced chemical vapor deposition, will result in the transition metal doping of semiconducting boron carbides. Here we report using ferrocene to introduce Fe dop¬ants, and a semiconducting boron-carbide homojunction has been fabricated. The diode characteristics are very similar to those fabricated with Co and Ni doping.