Unoccupied surface electronic structure of Gd(0001)

Authors

• Dongqi Li, Syracuse University
• Peter A. Dowben, University of Nebraska-LincolnFollow
• J.E. Ortega, IBM Thomas J. Watson Research Center, Yorktown Heights, New York
• F.J. Himpsel, IBM Thomas J. Watson Research Center, Yorktown Heights, New York

Document Type

Article

Date of this Version

March 1994

Comments

Published by American Physical Society. Copyright 1994. Permission to use. Phys. Rev. B 49 (1994) 7734–7738. http://prb.aps.org/.

Abstract

The unoccupied surface electronic structure of Gd(0001) was investigated with high-resolution inverse-photoemission spectroscopy. An empty surface state near E_F is observed at Γ¯. Two other surface-sensitive features are also revealed at 1.2 and 3.1 eV above the Fermi level. Hydrogen adsorption on Gd surfaces was used to distinguish the surface-sensitive features from the bulk features. The unoccupied bulk-band critical points are determined to be Γ_3^- at 1.9 eV and A₁ at 0.8 eV.