Heterojunction fabrication by selective area chemical vapor deposition induced by synchrotron radiation

Authors

• Dongjin Byun, University of Nebraska-Lincoln
• Seong-don Hwang, University of Nebraska-Lincoln
• Peter A. Dowben, University of Nebraska-LincolnFollow
• F. Keith Perkins, Electronic Science Technology Division, Naval Research Laboratory, Washington, DC
• F. Filips, University of Nebraska-Lincoln
• N.J. Ianno, University of Nebraska-Lincoln

Document Type

Article

Date of this Version

April 1994

Comments

Published by American Institute of Physics; Applied Phys. Lett. 64 (1994) 1968–1970. Copyright 1994. Permission to use.

Abstract

We have fabricated a B₅C, boron-carbide/Si(111) heterojunction diode by the synchrotron radiation-induced decomposition of orthocarborane. This diode can be compared with similar boron-carbide/Si(111) heterojunction diodes fabricated by plasma enhanced chemical vapor deposition. The synchrotron radiation induced chemical vapor deposition is postulated to occur via the decomposition of weakly chemisorbed species and the results suggest that “real-time'' projection lithography (selective area deposition) of boron-carbide devices is possible.