A simple technique to measure stress in ultrathin films during growth

Authors

D. Sander, Max-Plan&-Institut fur Mikrostrukturphysik, Weinberg 2, 06120-Halle, Germany
Axel Enders, University of Nebraska at LincolnFollow
J. Kirschner, Max-Plan&-Institut fur Mikrostrukturphysik, Weinberg 2, 06120-Halle, GermanyFollow

Document Type

Article

Date of this Version

1995

Comments

Published in Rev. Sci. Instrum. 66 (9), September 1995. Copyright 1995 American Institute of Physics. Used by permission.

Abstract

We demonstrate an easy implementation of the cantilever bending beam approach to measure stress during film growth in ultrahigh vacuum. Using a simple and compact optical deflection technique, film stress with sub-monolayer sensitivity can be detected. A stress measurement during FeSi, formation on Si(l11) is presented.