Switching properties of self-assembled ferroelectric memory cells

Authors

• M. Alexe, Max Planck Institute of Microstructure Physics, Weinberg 2, Germany
• Alexei Gruverman, University of Nebraska-LincolnFollow
• C. Harnagea, Max Planck Institute of Microstructure Physics, Weinberg 2, D-06120 Halle (Saale), Germany
• N. D. Zakharov, Max Planck Institute of Microstructure Physics, Weinberg 2, D-06120 Halle (Saale), Germany
• A. Pignolet, Max Planck Institute of Microstructure Physics, Weinberg 2, D-06120 Halle (Saale), Germany
• D. Hesse, Max Planck Institute of Microstructure Physics, Weinberg 2, D-06120 Halle (Saale), Germany
• J. F. Scott, University of New South Wales, Sydney, Australia

Document Type

Article

Date of this Version

August 1999

Comments

Published in Appl. Phys. Lett., Vol. 75, No. 8, 23 August 1999. Copyright © 1999 American Institute of Physics. Used by permission.

Abstract

In this letter, we report on the switching properties of an ordered system of Bi₄Ti₃O₁₂ ferroelectric memory cells of an average lateral size of 0.18 μm formed via a self-assembling process. The ferroelectricity of these cells has been measured microscopically and it has been demonstrated that an individual cell of 0.18 μm size is switching. Switching of single nanoelectrode cells was achieved via scanning force microscopy working in piezoresponse mode.