Growth of epitaxial YbBa₂Cu₃O₇ superconductor by liquid-gas-solidification processing

Authors

• H.S. Chen, AT&T Bell Laboratories, Murray Hill, New Jersey
• Sy_Hwang Liou, University of Nebraska-LincolnFollow
• A.R. Kortan, AT&T Bell Laboratories, Murray Hill, New Jersey
• L.C. Kimerling, AT&T Bell Laboratories, Murray Hill, New Jersey

Document Type

Article

Date of this Version

August 1988

Comments

Published by American Institute of Physics. Appl. Phys. Lett. 53, 705 (1988). © 1988 American Institute of Physics. Permission to use. Journal home page = http://jap.aip.org/jap/.

Abstract

Superconductive films of YbBa₂Cu₃O₇ have been epitaxially grown on SrTiO₃ substrate by a novel liquid-gas-solidification process. A layer of metallic YbBa₂Cu₃ melt was coated on the substrate and in situ oxidized. The oxide films grown on the SrTiO₃ (100) substrate are epitaxially oriented in structure with the c axis normal to the plane film. Values of T _c (R =0) of 82 K with a transition width of 1 K have been achieved. The critical current density J _c is typically 10⁵ A/cm² at 50 K and 10⁴ A/cm² at 77 K.