Research Papers in Physics and Astronomy

 

Date of this Version

May 2002

Comments

Published by American Institute of Physics. J. Appl. Phys. 91, 7983 (2002). ©2002 American Institute of Physics. Permission to use. http://jap.aip.org/jap/.

Abstract

Thickness dependence on the domain wall resistivity of zig zag thin permalloy wires was studied from 10 to 300 K. The maximum domain wall resistivity was obtained in wire with 100-nm-film thickness. The multidomain state resistivity was 14.29 µΩ cm, while single-domain state resistivity was 14.36 µΩ cm at 10 K. The ratio of domain wall magnetoresistance was measured to be 0.034%, 0.112%, and 0.258%, and the magnetic field where the domain wall started to switch was measured as –70, –40, and +80 Oe for wires with thicknesses of 20, 40, and 100 nm, respectively, at 250 K. Domain wall resistivity was nearly independent of temperature for wire with 40-nm-film thickness but varied significantly with temperature for 100-nm-thick wire between 10 and 300 K.

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