Department of Physics and Astronomy: Publications and Other Research
Date of this Version
May 2002
Abstract
Thickness dependence on the domain wall resistivity of zig zag thin permalloy wires was studied from 10 to 300 K. The maximum domain wall resistivity was obtained in wire with 100-nm-film thickness. The multidomain state resistivity was 14.29 µΩ cm, while single-domain state resistivity was 14.36 µΩ cm at 10 K. The ratio of domain wall magnetoresistance was measured to be 0.034%, 0.112%, and 0.258%, and the magnetic field where the domain wall started to switch was measured as –70, –40, and +80 Oe for wires with thicknesses of 20, 40, and 100 nm, respectively, at 250 K. Domain wall resistivity was nearly independent of temperature for wire with 40-nm-film thickness but varied significantly with temperature for 100-nm-thick wire between 10 and 300 K.
Comments
Published by American Institute of Physics. J. Appl. Phys. 91, 7983 (2002). ©2002 American Institute of Physics. Permission to use. http://jap.aip.org/jap/.