Integration of epitaxial colossal magnetoresistive films onto Si(100) using SrTiO₃ as a template layer

Authors

Aswini K. Pradhan, Center for Materials Research, Norfolk State UniversityFollow
S. Mohanty, Center for Materials Research, Norfolk State University, Norfolk, Virginia
Kai Zhang, Center for Materials Research, Norfolk State University, Norfolk, Virginia
J.B. Dadson, Center for Materials Research, Norfolk State University, Norfolk, Virginia
E.M. Jackson, Center for Materials Research, Norfolk State University, Norfolk, Virginia
D. Hunter, Center for Materials Research, Norfolk State University, Norfolk, Virginia
Rakhim R. Rakhimov, Center for Materials Research, Norfolk State UniversityFollow
G.B. Loutts, Center for Materials Research, Norfolk State University, Norfolk, Virginia
Jun Zhang, University of Nebraska - LincolnFollow
David J. Sellmyer, University of Nebraska-LincolnFollow

Date of this Version

1-3-2005

Comments

Published by American Institute of Physics. Appl. Phys. Lett. 86, 012503 (2005). ©2005 American Institute of Physics. Permission to use. http://apl.aip.org/jap/.

Abstract

We report on the integration of epitaxial colossal magnetoresistive La_0.67Ba_0.33MnO films on Si(100) semiconductor using SrTiO₃ template layer by pulsed-laser deposition. X-ray diffraction reveals the superior quality of the manganite film that grows epitaxially on heteroepitaxially grown SrTiO₃ template layer on Si substrate. The epitaxial films demonstrate remarkable surface morphology, magnetic transition and hysteresis, magnetoresistance, and ferromagnetic resonance, illustrating the ferromagnetic nature of the film and possible device applications at room temperature.