Magnetic properties and switching volumes of nanocrystalline SmFeSiC films

Authors

S.Y. Zhang, State Key Laboratory of Magnetism, Institute of Physics and Center for Condensed Matter Physics, Chinese Academy of Sciences, Beijing 100080, People's Republic of China
Z.S. Shan, University of Nebraska - Lincoln
Yi Liu, University of Nebraska-LincolnFollow
T.Y. Zhao, Institute of Physics and Center for Condensed Matter Physics, Chinese Academy of Sciences, Beijing 100080, People's Republic of China
J.G. Zhao, Institute of Physics and Center for Condensed Matter Physics, Chinese Academy of Sciences, Beijing 100080, People's Republic of China
B.G. Shen, Institute of Physics and Center for Condensed Matter Physics, Chinese Academy of Sciences, Beijing 100080, People's Republic of China
W.S. Zhan, Institute of Physics and Center for Condensed Matter Physics, Chinese Academy of Sciences, Beijing 100080, People's Republic of China
David J. Sellmyer, University of Nebraska-LincolnFollow

Document Type

Article

Date of this Version

4-15-1997

Comments

Published by American Institute of Physics. J. Applied Physics 81, 4551 (1997). ©1997 American Institute of Physics. Permission to use. http://jap.aip.org/jap/.

Abstract

Systematic studies of the effects of Si addition on the magnetic and magnetization reversal properties of SmFeSiC films are presented. The magnetic switching volume and other magnetic parameters (e.g., coercivity) are strongly dependent upon the Si content. Correlations between switching volume, coercivity, and the intergrain interactions are discussed.