Ellipsometric Study of Single-Crystal γ-Inse From 1.5 To 9.2 Ev

Authors

S. G. Choi, National Renewable Energy Laboratory, Golden, Colorado 80401, USA
D. E. Aspnes, Department of Physics, North Carolina State University, Raleigh, North Carolina 27695, USA
A. L. Fuchser, J.A. Woollam Co. Inc., Lincoln, Nebraska 68508, USA
C. Martinez-Tomas, Departamento de Física Aplicada i Electromagnetismo, Universitat de València, C/Dr. Moliner 50, 46100 Burjassot, Spain
V. Muñoz Sanjosé, Departamento de Física Aplicada i Electromagnetismo, Universitat de València, C/Dr. Moliner 50, 46100 Burjassot, Spain
D. H. Levi, National Renewable Energy Laboratory, Golden, Colorado 80401, USA

Date of this Version

2010

Comments

Published in APPLIED PHYSICS LETTERS 96, 181902 (2010).

Abstract

We report the component E ┴ c of the pseudodielectric-function tensor <ε(E)> = <ε₁(E)> + i< ε₂(E)> of γ-phase single-crystal InSe, obtained from 1.5 to 9.2 eV by vacuum-ultraviolet spectroscopic ellipsometry with the sample at room temperature. Overlayer artifacts were reduced as far as possible by measuring fresh surfaces prepared by cleavage. Accurate critical-point energies of observed structures were obtained by a combined method of spectral analysis.