Chemical and Biomolecular Engineering Research and Publications

 

Title

Ferroelectric Storage Read-Write Memory

Date of this Version

4-15-2003

Comments

Inventors: Hemantha K. Wickramasinghe, Chappaqua, NY (US); Ravi F. Saraf, Briar Cliff Manor, NY (US)

Abstract

A memory device including at least one pair of spaced apart conductors and a ferroelectric material between the pair of conductors. The pair of conductors is spaced apart a distance sufficient to permit a tunneling current there between.

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