A non-vacuum process for preparing nanocrystalline CuIn_1−xGa_xSe₂ materials involving an open-air solvothermal reaction

Authors

• J. Olejníček, University of Nebraska at Kearney,
• Chad A. Kamler, University of Nebraska-Lincoln
• A. Mirasano, University of Nebraska at Kearney,
• A. L. Martinez-Skinner, University of Nebraska at Kearney,
• M. A. Ingersoll, University of Nebraska at Kearney,
• C. L. Exstrom, University of Nebraska at Kearney,Follow
• S. A. Darveau, University of Nebraska at Kearney,
• J. L. Huguenin-Love
• M. Diaz, University of Nebraska-Lincoln
• Natale J. Ianno, University of Nebraska-LincolnFollow
• Rodney J. Soukup, University of Nebraska-LincolnFollow

Document Type

Article

Date of this Version

1-2010

Comments

Published in Solar Energy Materials and Solar Cells 94:1 (January 2010), pp. 8–11; doi: 10.1016/j.solmat.2009.03.024  Copyright © 2009 Elsevier B.V. Used by permission. http://www.elsevier.com/locate/solmat

Abstract

A non-vacuum, two-step process has been used to prepare a series of nanocrystalline CuIn_1−xGa_xSe₂ (x = 0, 0.25, 0.5, 0.75, 1) materials. An open-air solvothermal preparation in triethylenetetramine solvent was followed by annealing at 500 °C in a nitrogen atmosphere for 20 min. All materials have mixed clustered plate, spherical particle, and nanorod morphologies with the smallest particle diameters ranging between 20 and 40 nm. Raman spectroscopy and X-ray diffraction (XRD) confirm that indium/gallium ratio control is possible over a wide range. The solvothermal reaction step yields a mixture of chalcopyrite and Cu_2−xSe. This is converted to pure chalcopyrite product by annealing at 500 °C.