Electrical & Computer Engineering, Department of


Date of this Version



2011 37th IEEE Photovoltaic Specialists Conference (PVSC), doi: 10.1109/PVSC.2011.6186193


Copyright IEEE (2011). Used by permission.


The general purpose of the study is to fabricate and improve upon FeS2 thin films which can be used as the photon absorber layer for a heterojunction or homojunction solar cell. This work deals with the preparation of the pyrite by an unconventional sol-gel approach. Thin pyrite films were prepared by sulfurizing the iron oxide films previously deposited through the sol-gel method using iron (III) chloride as a precursor. The structural, morphological, electronic and optical properties of the deposited films were determined using X-ray diffraction (XRD), Raman spectroscopy, scanning electron microscopy, Auger electron spectroscopy (AES), UV-Vis absorption spectroscopy, Hall effect and profilometry. The effects of annealing and sulfurization temperatures were studied. The work was also devoted to the research of sodium diffusion from the substrate due to the thermal treatment and its affect on the pyrite films functionality.