Electrical & Computer Engineering, Department of


Date of this Version



Patent No.: US 10,233,544 B2


Appl. No.: 15/158,305


A gallium nitride thin film can be formed on a substrate at a low temperature (e.g., not higher than 600°C .) by applying a laser to resonantly excite molecules of a first precursor that contains nitrogen, in which the laser has a wavelength that is selected to match a vibration mode and/or a vibrational rotational mode of the molecules of the first precursor. A second precursor is provided in which the excited first precursor and the second precursor react to form a nitride that is deposited on the substrate. For example, the second precursor may include gallium, and the nitride may be gallium nitride. Other nitride films can be produced in a similar manner.