Electrical & Computer Engineering, Department of
ORCID IDs
Prashanth Gopalan https://orcid.org/0000-0002-5201-1700
Sean Knight https://orcid.org/0000-0002-2758-6967
Ashish Chanana https://orcid.org/0000-0002-1374-0652
Megan Stokey https://orcid.org/0000-0003-0701-2218
Praneeth Ranga https://orcid.org/0000-0001-9002-1523
Michael A. Scarpulla https://orcid.org/0000-0002-6084-6839
Sriram Krishnamoorthy https://orcid.org/0000-0002-4682-1002
Vanya Darakchieva https://orcid.org/0000-0002-8112-7411
Zbigniew Galazka https://orcid.org/0000-0003-0812-2873
Klaus Irmscher https://orcid.org/0000-0001-9859-4465
Andreas Fiedler https://orcid.org/0000-0003-3404-0804
Mathias Schubert https://orcid.org/0000-0001-6238-663X
Document Type
Article
Date of this Version
2021
Citation
Appl. Phys. Lett. 117, 252103 (2020); doi: 10.1063/5.0031464
Abstract
The quasi-static anisotropic permittivity parameters of electrically insulating beta gallium oxide (β-Ga2O3) were determined by terahertz spectroscopy. Polarization-resolved frequency domain spectroscopy in the spectral range from 200 GHz to 1 THz was carried out on bulk crystals along different orientations. Principal directions for permittivity were determined along crystallographic axes c and b and reciprocal lattice direction a*. No significant frequency dispersion in the real part of dielectric permittivity was observed in the measured spectral range. Our results are in excellent agreement with recent radio frequency capacitance measurements as well as with extrapolations from recent infrared measurements of phonon mode and high-frequency contributions and close the knowledge gap for these parameters in the terahertz spectral range. Our results are important for applications of β-Ga2O3 in high-frequency electronic devices.
Comments
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