Electrical & Computer Engineering, Department of

 

Date of this Version

1-2022

Citation

Physical Review Materials 6, 014601 (2022)

DOI: 10.1103/PhysRevMaterials.6.014601

Comments

Copyright 2022 by the American Physical Society

https://doi.org/10.1103/PhysRevMaterials.6.014601

Abstract

We determine the anisotropic dielectric functions of rhombohedral α-Ga2O3 by far-infrared and infrared generalized spectroscopic ellipsometry and derive all transverse optical and longitudinal optical phonon mode frequencies and broadening parameters. We also determine the high-frequency and static dielectric constants. We perform density functional theory computations and determine the phonon dispersion for all branches in the Brillouin zone, and we derive all phonon mode parameters at the Brillouin zone center including Raman-active, infrared-active, and silent modes. Excellent agreement is obtained between our experimental and computation results as well as among all previously reported partial information from experiment and theory. We also compute the same information for α-Al2O3, the binary parent compound for the emerging alloy of α-(AlxGa1−x)2O3, and use results from previous investigations [Schubert, Tiwald, and Herzinger, Phys. Rev. B 61, 8187 (2000)] to compare all properties among the two isostructural compounds. From both experimental and theoretical investigations, we compute the frequency shifts of all modes between the two compounds. Additionally, we calculate overlap parameters between phonon mode eigenvectors and discuss the possible evolution of all phonon modes into the ternary alloy system and whether modes may form single-mode or more complex mode behaviors.

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