Mechanical & Materials Engineering, Department of


Date of this Version



Mater. Res. Lett., 2016 Vol. 4, No. 1, 48–54; doi: 10.1080/21663831.2015.1103796


This is an Open Access article distributed under the terms of the Creative Commons Attribution License


Through examination of radiation tolerance properties of amorphous silicon oxycarbide (SiOC) and crystalline Fe composite to averaged damage levels, from approximately 8 to 30 displacements per atom (dpa), we demonstrated that the Fe/SiOC interface and the Fe/amorphous FexSiyOz interface act as efficient defect sinks and promote the recombination of vacancies and interstitials. For thick Fe/SiOC multilayers, a clear Fe/SiOC interface remained and no irradiation-induced mixing was observed even after 32 dpa. For thin Fe/SiOC multilayers, an amorphous FexSiyOz intermixed layer was observed to form at 8 dpa, but no further layer growth was observed for higher dpa levels.