Mechanical and Materials Engineering, Department of
Department of Mechanical and Materials Engineering: Faculty Publications
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Document Type
Article
Date of this Version
2013
Citation
Scientific Reports, 3:2707 | DOI: 10.1038/srep02707
Abstract
High sensitivity photodetectors in ultraviolet (UV) and infrared (IR) range have broad civilian and military applications. Here we report on an un-cooled solution-processed UV-IR photon counter based on modified organic field-effect transistors. This type of UV detectors have light absorbing zinc oxide nanoparticles (NPs) sandwiched between two gate dielectric layers as a floating gate. The photon-generated charges on the floating gate cause high resistance regions in the transistor channel and tune the source-drain output current. This ‘‘super-float-gating’’ mechanism enables very high sensitivity photodetectors with a minimum detectable ultraviolet light intensity of 2.6 photons/µm2s at room temperature as well as photon counting capability. Based on same mechansim, infrared photodetectors with lead sulfide NPs as light absorbing materials have also been demonstrated.
Included in
Mechanics of Materials Commons, Nanoscience and Nanotechnology Commons, Other Engineering Science and Materials Commons, Other Mechanical Engineering Commons
Comments
This document is published under a Creative Commons/Open Access license.