DEPSCoR-98-High Temperature/High Speed Junction Devices
Document Type Article
Air Force Office of Scientific Research (AFOSR) Notice of Transmittal DTIC. This technical report has been reviewed and is approved for public release law AFR 190-12.
The goal of the project was to take an interdisciplinary approach to the improvement of high temperature devices, with an emphasis on the fabrication and optimization of metal-semiconductor connections, junction field effect transistors and other heterojunction structures. We have focused on boron carbide and silicon carbide substrate materials and have made progress in the improvement of direct-write fabrication processes for the formation of metal connections and other heterojunctions. Accomplishments made in the boron carbide involve the development of protocols for fabrication of substrates and for doping with phosphorous and nickel. For silicion carbide CVD, we have demonstrated that carbonyl-containing organics lead to SiC formation, but have not been able to extend the material's growth past the sub-monolayer level at the time of this report. A major success has been the discovery of polymers, based on the vinylidene monomer, that can be directly photo-etched in a process useful to film resist lithography. Finally the metallocenes have been developed for CVD for a number of metals, ego , Fe, Ni, Co, Ru, under a variety of conditions. The metallocene-like Pd (η5-C5H5) (η3-C3H5) has been shown to be a very effective source compound for the low temperature deposition of palladium.