Mechanical & Materials Engineering, Department of
Date of this Version
United States Patent Patent No.:US 9,786,857 B2
A field effect transistor photodetector that can operate in room temperature includes a source electrode , a drain electrode , a channel to allow an electric current to flow between the drain and source electrodes , and a gate electrode to receive a bias voltage for controlling the current in the channel . The photodetector includes a light - absorbing mate rial that absorbs light and traps electric charges . The light absorbing material is configured to generate one or more charges upon absorbing light having a wavelength within a specified range and to hold the one or more charges . The one or more charges held in the light - absorbing material reduces the current flowing through the channel .
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