Mechanical & Materials Engineering, Department of
Date of this Version
2020
Citation
Pub. No.: US 20200035418 A1
Abstract
Semiconductor devices, and methods of forming the same, include a cathode layer, an anode layer, and an active layer disposed between the cathode layer and the anode layer, wherein the active layer includes a perovskite layer. A passivation layer is disposed directly on a surface of the active layer between the cathode layer and the active layer, the passivation layer including a layer of material that passivates both cationic and anionic defects in the surface of the active layer.
Included in
Mechanics of Materials Commons, Nanoscience and Nanotechnology Commons, Other Engineering Science and Materials Commons, Other Mechanical Engineering Commons
Comments
Appl. No.: 16/542,712