Mechanical & Materials Engineering, Department of
Date of this Version
2016
Citation
PatentNo.: US 9,331,293 B2
Abstract
A field effect transistor photodetector that can operate in room temperature includes a source electrode, a drain electrode, a channel to allow an electric current to flow between the drain and source electrodes, and a gate electrode to receive a bias voltage for controlling the current in the channel. The photodetector includes a light-absorbing material that absorbs light and traps electric charges. The light-absorbing material is configured to generate one or more charges upon absorbing light having a wavelength within a specified range and to hold the one or more charges. The one or more charges held in the light-absorbing material reduces the current flowing through the channel.
Included in
Mechanics of Materials Commons, Nanoscience and Nanotechnology Commons, Other Engineering Science and Materials Commons, Other Mechanical Engineering Commons
Comments
Appl. No.: 14/214,513