Effects of Gd Doping and Oxygen Vacancies on the Properties of EuO Films Prepared via Pulsed Laser Deposition

Authors

Xianjie Wang, University of Wyoming
Pan Liu, University of Wyoming
Kyle A. Fox, University of Wyoming
Jinke Tang, University of WyomingFollow
Juan A. Colón Santana, University of Nebraska-Lincoln
Kirill D. Belashchenko, University of Nebraska-LincolnFollow
Peter A. Dowben, University of Nebraska-LincolnFollow
Yu Sui, Harbin Institute of Technology

Date of this Version

6-2010

Document Type

Article

Citation

IEEE Transactions On Magnetics, Vol. 46, No. 6, June 2010

Comments

Copyright 2010 IEEE. Used by permission.

Abstract

We have successfully prepared EuO films on Si(100) wafers via pulsed laser deposition (PLD). It is well recognized that EuO grows with texture growth along (100) but the addition of 4% Gd changes the lattice constant and the texture growth to (111) as well as having a profound influence on the magnetic properties. The differences in the effects between Gd doping and oxygen vacancies, both expected to be n-type (donor state) dopants in EuO, are discussed.