Gamma and X-ray sensitivity of Gd₂O₃ heterojunctions

Authors

Juan A. Colon Santana, University of Nebraska-LincolnFollow
C M. Young, Air Force Institute of Technology
J W. McClory, Air Force Institute of TechnologyFollow
J C. Petrosky, Air Force Institute of TechnologyFollow
X Wang, University of WyomingFollow
P Liu, University of Wyoming
Jinke Tang, University of WyomingFollow
V T. Adamiv, Institute of Physical OpticsFollow
Ya V. Burak, Institute of Physical OpticsFollow
Keisuke Fukutani, University of Nebraska-LincolnFollow
Peter A. Dowben, University of Nebraska-LincolnFollow

Date of this Version

2013

Citation

Radiation Measurements 51-52 (2013)

Comments

U.S Government work

Abstract

We find that Gd₂O₃ thin films strongly favor a (-402) texture growth on a variety of substrates and will form heterojunction diodes with silicon, especially when doped with oxygen vacancies. Even in the thin film limit, these heterojunction diodes appear to be sensitive to gamma radiation, likely from the X-rays created by scattering events, adding to the numerous hurdles that must be overcome if Gd based semiconductor devices are to be used for solid state neutron detection applications.