Department of Physics and Astronomy: Publications and Other Research


Date of this Version



Patent No.: US 10,163,932 B1


Appl. No.: 15/218,795


A ferroelectric random-access memory structure and processes for fabricating a ferroelectric random-access memory structure are described that includes using a molybdenum sulfide layer. In an implementation, a ferroelectric random access memory structure in accordance with an exemplary embodiment includes at least one FeFET, which further includes a substrate; a back gate electrode formed on the substrate, the back gate electrode including a conductive layer; a gate dielectric substrate formed on the back gate electrode; a source electrode formed on the gate dielectric substrate; a drain electrode formed on the gate dielectric substrate; and a layered transition metal dichalcogenide disposed on the gate dielectric substrate and contacting the source electrode and the drain electrode.