Department of Physics and Astronomy: Publications and Other Research
Date of this Version
2019
Citation
Patent No.: US 10,192,971 B2
Abstract
A top - gated graphene field effect transistor can be fabricated by forming a layer of graphene on a substrate, and applying an electrochemical deposition process to deposit a layer of dielectric polymer on the graphene layer. An electric potential between the graphene layer and a reference electrode is cycled between a lower potential and a higher potential. A top gate is formed above the polymer.
COinS
Comments
Appl. No.: 15/419,719