Date of this Version
U.S. Patent Jul . 23 , 2019 US 10 , 361 , 292 B2
Antiferromagnetic magneto - electric spin - orbit read ( AF SOR ) logic devices are presented . The devices include a voltage - controlled magnetoelectric ( ME ) layer that switches polarization in response to an electric field from the applied voltage and a narrow channel conductor of a spin - orbit coupling ( SOC ) material on the ME layer . One or more sources and one or more drains , each optionally formed of ferromagnetic material , are provided on the SOC material .