Research Papers in Physics and Astronomy

 

Date of this Version

March 2007

Comments

Published in Appl. Phys. Lett. 90, 112914 2007. Copyright © 2007 American Institute of Physics. Used by permission.

Abstract

The authors report on an approach to establish intrinsic polarization properties in bismuth-layered ferroelectric films by piezoelectric coefficient and soft-mode spectroscopy, as well as by a direct polarization–electric field hysteresis. In epitaxially grown (Bi4−xNdx)Ti3O12 (0≤x≤0.73) films, they show that these complementary characterizations can phenomenologically and thermodynamically represent the intrinsic polarization states in (Bi4−xNdxTi3O12 films, and the intrinsic Ps of 67 μC/cm2 is estimated for pure Bi4Ti3O12, superior to 50 μC/cm2 in bulk single crystal. Their results provide a pathway to draw full potential in ferroelectric thin films.

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